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www.irf.com 1 bulletin i27181 rev 1.5 08/05 EMP15P12D pim+ emp features: power module: ? npt igbts 15a, 1200v ? 10us short circuit capability square rbsoa low vce (on) (2.7vtyp @ 15a, 25c) positive vce (on) temperature coefficient ? gen iii hexfred technology low diode v f (2.32vtyp @ 15a, 25c) soft reverse recovery ? 10m ? sensing resistors on all phase outputs and dcbus minus rail thermal coefficient < 50ppm/c description the EMP15P12D is a power integrated module for motor driver applications with embedded sensing resistors on all three-phase output currents. each sensing resistor?s head is directly bonded to an external pin to reduce parasitic effects and achieve high accuracy on feedback voltages. since their thermal coefficient is very low, no value compensation is required across the complete operating temperature range. the device comes in the emp tm package, fully compatible in length, width and height with econopack 2 outline. package: emp ? bridge brake inverter (econopack 2 outline compatible) power module schematic: out 1 out 2 out 3 in1 in2 in3 dc+ out dc+ in brk dc- dc- (signal) dc+ (signal) three phase bridge brake inverter with current sensing resistors on all output phases and thermistor power module frame pins mapping in1 in2 in3 out1 out2 out3 dc in- brk dc out+ dc in+
www.irf.com 2 EMP15P12D i27181 rev 1.5 08/05 pins mapping symbol lead description in1/2/3 diode bridge power input pins dc out+ dc bus plus power output pin dc in+ dc bus plus power input pin dc in- dc bus minus power input pin dc + dc bus plus signal connection (kelvin point) dc - dc bus minus signal connections (kelvin points) brk brake power output pin brk brake signal connection (kelvin point) th + thermal sensor positive input th - thermal sensor negative input g1/2/3 gate connections for high side igbts e1/2/3 emitter connections for high side igbts (kelvin points) gb gate connection for brake igbt (kelvin point) eb emitter connection for brake igbt (kelvin point) r1/2/3 + output current sensing resistor positive input (igbts emitters 1/2/3 side, kelvin points) r1/2/3 - output current sensing resistor negative input (motor side, kelvin points) g4/5/6 gate connections for low side igbts e4/5/6 emitter connections for low side igbts (kelvin points) out1/2/3 three phase power output pins general description the emp module contains six igbts and hexfreds diodes in a standard inverter configuration. igbts used are the new npt 1200v-15a (current rating measured at 100c ), generation v from international rectifier; the hexfred diodes have been designed specifically as pair elements for these power transistors. thanks to the new design and technological realization, these devices do not need any negative gate voltage for their complete turn off; moreover the tail effect is also substantially reduced compared to competitive devices of the same family. this feature tremendously simplifies the gate driving stage. another innovative feature in this type of power modules is the presence of sensing resistors in the three output phases, for precise motor current sensing and short circuit protections, as well as another resistor of the same value in the dc bus minus line, needed only for device protections purposes. a complete schematic of the emp module is shown on page 1 where all sensing resistors have been clearly evidenced, a thermal sensor with negative temperature coefficient is also embedded in the device structure. the package chosen is mechanically compatible with the well known econopack outline, also the height of the plastic cylindrical nuts for the external pcb positioned on its top is the same as the econopack ii, so that, with the only re-layout of the main motherboard, this module can fit into the same mechanical fixings of the standard econopack ii package thus speeding up the device evaluation in an already existing driver. an important feature of this new device is the presence of kelvin connections for all feedback and command signals between the board and the module with the advantage of having all emitter and resistor sensing independent from the main power path. the final benefit is that all low power signal from/to the controlling board are unaffected by parasitic inductances or resistances inevitably present in the module power layout. the new package outline is shown on bottom of page 1. notice that because of high current spikes on those inputs the dc bus power pins are doubled in size compared to the other power pins. module technology uses the standard and well know dbc (direct bondable copper): over a thick copper base an allumina (al 2 o 3 ) substrate with a 300 m copper foil on both side is placed and igbts and diodes dies are directly soldered, through screen printing process. these dies are then bonded with a 15 mils aluminum wire for power and signal connections. all components are then completely covered by a silicone gel for mechanical protection and electrical isolation purposes.
www.irf.com 3 EMP15P12D i27181 rev 1.5 08/05 absolute maximum ratings (t c =25oc) absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage parameters are absolute voltages referenced to v dc- , all currents are defined positive into any lead. thermal resistance and power dissipation ratings are measured at still air conditions. symbol parameter definition min. max. units v dc dc bus voltage 0 1000 v ces collector emitter voltage 0 1200 v i c @ 100c igbts continuous collector current (t c = 100 o c, fig. 1) 15 i c @ 25c igbts continuous collector current (t c = 25 o c,fig 1) 30 i cm pulsed collector current (fig. 3, fig. ct.5) 60 i f @ 100c diode continuous forward current (t c = 100 o c) 15 i f @ 25c diode continuous forward current (t c = 25 o c) 30 i fm diode maximum forward current 60 a v ge gate to emitter voltage -20 +20 v p d @ 25c power dissipation (one transistor) 140 inverter and brake p d @ 100c power dissipation (one transistor, t c = 100 o c) 55 w v rrm repetitive peak reverse voltage (t j = 150 o c) 1400 v rsm non repetitive peak reverse voltage t j = 150 o c irrm(max)=5ma 1500 v i o diode continuous forward current (t c = 100 o c, 120 o rect conduction angle ) 45 100% v rrm reapplied 225 i fsm one-cycle forward. non-r epetitive on state surge current (t=10ms, initial t j = 150 o c) no voltage reapplied 270 a 100% v rrm reapplied 253 i 2 t current i 2 t for fusing (t=10ms, initial t j = 150 o c) no voltage reapplied 365 a 2 s bridge i 2 t current i 2 t for fusing (t=0.1 to 10ms, no voltage reapplied, initial t j = 150 o c) 3650 a 2 s mt mounting torque 3.5 nm t j operating junction temperature -40 +150 t stg storage temperature range -40 +125 oc power module vc-iso isolation voltage to base copper plate -2500 +2500 v
www.irf.com 4 EMP15P12D i27181 rev 1.5 08/05 electrical characteristics: inverter and brake for proper operation the device should be used within the recommended conditions. t j = 25c (unless otherwise specified) symbol parameter definition min. typ. max. units test conditions fig. v (br)ces collector to emitter breakdown voltage 1200 v v ge = 0v, i c = 250 a ? v (br)ces / ? t temperature coeff. of breakdown volt age +1.2 v/ o c v ge = 0v, i c = 1ma (25 - 125 o c) 2.70 3.00 i c = 15a, v ge = 15v 5, 6 3.74 4.24 i c = 30a, v ge = 15v 7, 9 v ce(on) collector to emitter saturation voltage 3.14 3.61 v i c = 15a, v ge = 15v, t j = 125 o c 10, 11 v ge(th) gate threshold voltage 4.68 4.89 5.30 v v ce = v ge , i c = 250 a ? v ge(th) / ? tj temp. coeff. of threshold volt age -9.80 mv/ o c v ce = v ge , i c = 1ma (25 - 125 o c) 12 g fe forward trasconductance 8 9 10 s v ce = 50v, i c = 15a, pw = 80 s 125 v ge = 0v, v ce = 1200v 376 1110 v ge = 0v, v ce = 1200v, t j = 125 o c i ces zero gate voltage collector current 2000 a v ge = 0v, v ce = 1200v, t j = 150 o c 2.32 2.52 i c = 15a v fm diode forward voltage drop 2.47 2.64 v i c = 15a, t j = 125 o c 8 i ges gate to emitter leakage current 100 na v ge = 20v r1/2/3 sensing resistors 9.9 10 10.1 m ? electrical characteristics: bridge for proper operation the device should be used within the recommended conditions. t j = 25c (unless otherwise specified) symbol parameter definition min. typ. max. units test conditions fig. 1.24 1.76 t p = 400 s, i pk = 30a v fm forward voltage drop 1.08 1.27 v t p = 400 s, i pk = 15a 24 v f(to) threshold voltage 0.78 v t j = 125 o c i rm reverse leakage current 5 ma t j = 125 o c v r = 1200v
www.irf.com 5 EMP15P12D i27181 rev 1.5 08/05 switching characteristics: inverter and brake for proper operation the device should be used within the recommended conditions. t j = 25c (unless otherwise specified) symbol parameter definition min typ max units test conditions fig. q g total gate charge (turn on) 84 127 q ge gate ? emitter charge (turn on) 10 15 q gc gate ? collector charge (turn on) 43 64 nc i c = 15a v cc = 600v v ge = 15v 23 ct1 e on turn on switching loss 838 1207 i c = 15a, v cc = 600v, t j = 25 o c ct4 e off turn off switching loss 632 900 v ge = 15v, r g =10 ?, l = 500 h wf1 e tot total switching loss 1470 2107 j tail and diode rev. recovery included wf2 e on turn on switching loss 1154 1512 e off turn off switching loss 933 1030 e tot total switching loss 2087 2542 j i c = 15a, v cc = 600v, t j = 125 o c v ge = 15v, r g =10 ?, l = 500 h tail and diode rev. recovery included 13, 15 ct4 wf1 wf2 td (on) turn on delay time 98 104 14,16 tr rise time 14 25 i c = 15a, v cc = 600v, t j = 125 o c ct4 td (off) turn off delay time 132 142 wf1 tf fall time 226 247 ns v ge = 15v, r g =10 ?, l = 500 h wf2 c ies input capacitance 1323 v cc = 30v c oes output capacitance 255 v ge = 0v c res reverse transfer capacitance 37 pf f = 1mhz 22 t j = 150 o c, i c =60a, v ge = 15v to 0v rbsoa reverse bias safe operating area full square v cc = 1000v, v p = 1200v, r g = 5 ? 4 ct2 t j = 150 o c, v ge = 15v to 0v ct3 scsoa short circuit safe operating area 10 s v cc = 1000v, vp= 1200v, r g = 5 ? wf4 e rec diode reverse recovery energy 711 1263 j t j = 125 o c trr diode reverse recovery time 113 300 ns i f = 15a, v cc = 600v, irr peak reverse recovery current 36 41 a v ge = 15v, r g =10 ?, l = 500 h 17,18 19,20 21 ct4 wf3 rth j-c_t each igbt to copper plate thermal resistance 0.9 o c/w rth j-c_d each diode to copper plate thermal resistance 1.54 o c/w 25,26 rth c-h module copper plate to heat sink thermal resistance. silicon grease applied = 0.1mm 0.03 o c/w see also fig. 25, 26
www.irf.com 6 EMP15P12D i27181 rev 1.5 08/05 fig. 1 ? maximum dc collector current vs. case temperature fig. 2 ? power dissipation vs. case temperature t c = (oc) t c = (oc) fig. 3 ? forward soa t c = 25oc; tj 150oc fig. 4 ? reverse bias soa tj = 150oc, v ge = 15v v ce = (v) v ce = (v)
www.irf.com 7 EMP15P12D i27181 rev 1.5 08/05 fig. 5 ? typical igbt output characteristics tj = - 40oc; tp = 300 s fig. 6 ? typical igbt output characteristics tj = 25oc; tp = 300 s v ce = (v) v ce = (v) fig. 7 ? typical igbt output characteristics tj = 125oc; tp = 300 s fig. 8 ? typical diode forward characteristics tp = 300 s v ce = (v) v f = (v )
www.irf.com 8 EMP15P12D i27181 rev 1.5 08/05 fig. 9 ? typical v ce vs. v ge tj = - 40oc fig. 10 ? typical v ce vs. v ge tj = 25oc v ge = (v) v ge = (v) fig. 11 ? typical v ce vs. v ge tj = 125oc fig. 12 ? typical transfer characteristics v ce = 20v; tp = 20 s v ge = (v) v ge = (v)
www.irf.com 9 EMP15P12D i27181 rev 1.5 08/05 fig. 13 ? typical energy loss vs. i c tj = 125oc; l = 500 h; v ce = 600v; rg = 10 ?; v ge = 15v fig. 14 ? typical switching time vs. i c tj = 125oc; l = 500 h; v ce = 600v; rg = 10 ?; v ge = 15v i c = (a) i c = (a) fig. 15 ? typical energy loss vs. rg tj = 125oc; l = 500 h; v ce = 600v; i ce = 15a ; v ge = 15v fig. 16 ? typical switching time vs. rg tj = 125oc; l = 500 h; v ce = 600v; i ce = 15a ; v ge = 15v rg = ( ? ) rg = ( ? )
www.irf.com 10 EMP15P12D i27181 rev 1.5 08/05 fig. 17 ? typical diode i rr vs. i f tj = 125oc fig. 18 ? typical diode i rr vs. rg i f = 15a; tj = 125oc i f = (a) rg = ( ? ) fig. 19 ? typical diode i rr vs. di f /dt v dc = 600v; v ge = 15v; i f = 15a; tj = 125oc fig. 20 ? typical diode q rr v dc = 600v; v ge = 15v; tj = 125oc di f /dt (a/ s ) di f /dt (a/ s )
www.irf.com 11 EMP15P12D i27181 rev 1.5 08/05 fig. 21 ? typical diode e rec vs. i f tj = 125oc fig. 22 ? typical capacitance vs. v ce v ge = 0v; f = 1mhz i f = (a) v ce = (v) fig. 23 ? typical gate charge vs. v ge i c = 15a; l = 600 h; v cc = 600v fig. 24 ? on state voltage drop characteristic v fm vs i f t p = 400 s q g = (nc) v fm = (v)
www.irf.com 12 EMP15P12D i27181 rev 1.5 08/05 fig. 25 ? normalized transient impedance, junction-to-copper plate (igbts) t1, rectangular pulse duration (sec) fig. 26 ? normalized transient impedance, junction-to-copper plate (fred diodes) t1, rectangular pulse duration (sec)
www.irf.com 13 EMP15P12D i27181 rev 1.5 08/05
www.irf.com 14 EMP15P12D i27181 rev 1.5 08/05
www.irf.com 15 EMP15P12D i27181 rev 1.5 08/05 emp family part number identification 1- package type 2- current rating 3- current sensing configuration 4- voltage code: code x 100 = vrrm 5- circuit configuration code p= on 3 phases q= on 2 phases e= on 3 emitters f= on 2 emitters g= on 1 emitter a= bridge brake b= inverter c= inverter + brake d= bbi (bridge brake inverter) m= matrix d emp 15 p 12 1 2 3 4 5
www.irf.com 16 EMP15P12D i27181 rev 1.5 08/05 EMP15P12D case outline and dimensions data and specifications subject to change without notice this product has been designed and qualified for industrial level. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 3252 7105 tac fax: (310) 252 7309 visit us at www.irf.com for sales contact information 06/03 data and specifications subject to change without notice. sales offices, agents and distributors in major cities throughout the world. ? 2003 international rectifier - printed in italy 08-05 - rev. 1.5

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